US Patent Issued to STMICROELECTRONICS on Sept. 8 for "Manufacturing process of an ohmic contact of a HEMT device and HEMT device" (Italian Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,191, issued on Sept. 8, was assigned to STMICROELECTRONICS S.r.l. (Agrate Brianza, Italy).

"Manufacturing process of an ohmic contact of a HEMT device and HEMT device" was invented by Ferdinando Iucolano (Gravina di Catania, Italy), Giuseppe Greco (Misterbianco, Italy), Paolo Badala' (Acireale, Italy), Fabrizio Roccaforte (Mascalucia, Italy) and Monia Spera (Catania, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A process for manufacturing a HEMT device includes forming a conductive region on a work body having a semiconductive heterostructure. To obtain the conductive region, a first reaction region having carbon is formed on the heterostruc...