US Patent Issued to STMicroelectronics on May 19 for "Process for manufacturing a silicon carbide semiconductor device having improved characteristics" (Italian Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,439, issued on May 19, was assigned to STMicroelectronics S.r.l. (Agrate Brianza, Italy).

"Process for manufacturing a silicon carbide semiconductor device having improved characteristics" was invented by Nicolo' Piluso (Catania, Italy), Andrea Severino (Aci Sant'Antonio, Italy), Stefania Rinaldi Beatrice (San Pietro Clarenza, Italy), AngeloAnnibale Mazzeo (Catania, Italy), Leonardo Caudo (Bernareggio, Italy), Alfio Russo (Biancavilla, Italy), Giovanni Franco (Viagrande, Italy) and Anna Bassi (Gravina di Catania, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A process for manufacturing a silicon carbide semiconductor device includes providing ...