ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,630, issued on March 31, was assigned to STMICROELECTRONICS S.r.l. (Agrate Brianza, Italy).

"Process for manufacturing a silicon carbide device and silicon carbide device" was invented by Paolo Badala' (Acireale, Italy), Massimo Boscaglia (San Giovanni la Punta, Italy), Domenico Pierpaolo Mello (Catania, Italy), Anna Bassi (Gravina di Catania, Italy), Valentina Scuderi (Catania, Italy) and Giovanni Franco (Viagrande, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A process for manufacturing a silicon carbide device from a body of silicon carbide having a back surface, wherein a first layer of a first metal is formed on the back surface of the...