US Patent Issued to STMICROELECTRONICS on March 31 for "Forming an electronic device, such as a JBS or MPS diode, based on 3C-SiC, and 3C-SiC electronic device" (Italian Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,485, issued on March 31, was assigned to STMICROELECTRONICS S.r.l. (Agrate Brianza, Italy).

"Forming an electronic device, such as a JBS or MPS diode, based on 3C-SiC, and 3C-SiC electronic device" was invented by Simone Rascuna' (Catania, Italy), Fabrizio Roccaforte (Mascalucia, Italy), Gabriele Bellocchi (Catania, Italy) and Marilena Vivona (Calatafimi Segesta, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing an electronic device includes forming, at a front side of a solid body of 4H-SiC having a first electrical conductivity, at least one implanted region having a second electrical conductivity opposite to the fir...