US Patent Issued to STMicroelectronics on July 28 for "Manufacturing method of a SiC wafer with residual stress control" (Italian Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,693, issued on July 28, was assigned to STMicroelectronics S.r.l. (Agrate Brianza, Italy).

"Manufacturing method of a SiC wafer with residual stress control" was invented by Ruggero Anzalone (Viagrande, Italy) and Francesco La Via (Catania, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A production process of a SiC wafer carried out in a same reaction chamber includes forming, on a support, a first SiC layer. The support is separated from the first SiC layer. A second SiC layer is grown on the first SiC layer, which includes introducing into the reaction chamber a precursor in the gaseous phase of a first dopant having a first electrical cond...