US Patent Issued to STMICROELECTRONICS on Aug. 11 for "Silicon carbide integrated device and method for manufacturing an integrated device" (Italian Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,673, issued on Aug. 11, was assigned to STMICROELECTRONICS S.r.l. (Agrate Brianza, Italy).

"Silicon carbide integrated device and method for manufacturing an integrated device" was invented by Leonardo Fragapane (Catania, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated device includes: a semiconductor structural layer, including silicon carbide and having a first conductivity type; a power device integrated in the structural layer; and an edge termination structure, extending in a ring around the power device and having a second conductivity type. The edge termination structure includes a plurality of ring structures each arranged...