US Patent Issued to STMICROELECTRONICS on April 14 for "Silicon carbide power device with integrated resistance and corresponding manufacturing process" (Italian Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,516, issued on April 14, was assigned to STMICROELECTRONICS S.r.l. (Agrate Brianza, Italy).

"Silicon carbide power device with integrated resistance and corresponding manufacturing process" was invented by Mario Giuseppe Saggio (Aci Bonaccorsi, Italy) and Alfio Guarnera (Trecastagni, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide power device has: a die having a functional layer of silicon carbide and an edge area and an active area, surrounded by the edge area; gate structures formed on a top surface of the functional layer in the active area; and a gate contact pad for biasing the gate structures. The device also has an in...