ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,749,532, issued on Sept. 29, was assigned to STMicroelectronics International N.V. (Geneva).
"Non-volatile memory having first and second leday circuits, and electronic system and method" was invented by Davide Manfre (Pandino, Italy), Maurizio Francesco Perroni (Messina, Italy), Massimo Caruso (Messina, Italy), Fabio Enrico Carlo Disegni (Spino d'adda, Italy) and Cesare Torti (Pavia, Italy).
According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory includes a row decoder including, for each word-line, a respective pull-up connected to a first supply voltage and a switching circuit for selectively connecting one of the word-lines to ground. Th...