US Patent Issued to STMicroelectronics International on Sept. 22 for "Method for reading a multi-level non-volatile memory device, in particular a phase-change memory device, and multi-level non-volatile memory device" (French Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,744,084, issued on Sept. 22, was assigned to STMicroelectronics International N.V. (Geneva).

"Method for reading a multi-level non-volatile memory device, in particular a phase-change memory device, and multi-level non-volatile memory device" was invented by Xavier Lecoq (Voiron, France) and Alin Razafindraibe (Saint Martin d'Heres, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A multi-level non-volatile memory cell has N levels, N being even and greater than two, corresponding respectively to N logical data that can be stored in the memory cell and to N corresponding read current ranges. A datum stored in the memory cell is read by performing ...