US Patent Issued to STMicroelectronics International on Nov. 3 for "SRAM with fast, controlled peak current, power efficient array reset, and data corruption modes for secure applications" (Indian Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,791, issued on Nov. 3, was assigned to STMicroelectronics International N.V. (Geneva).

"SRAM with fast, controlled peak current, power efficient array reset, and data corruption modes for secure applications" was invented by Praveen Kumar Verma (Greater Noida, India), Promod Kumar (Greater Noida, India) and Harsh Rawat (Faridabad, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of corrupting contents of a memory array includes asserting a signal at a reset node to thereby cause starving of current supply to the memory array, and selecting bit lines and complementary bit lines associated with desired columns of the memory array that cont...