US Patent Issued to STMicroelectronics International on May 19 for "Front side OHMIC contact formation for SiC device" (Italian Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,202, issued on May 19, was assigned to STMicroelectronics International N.V. (Geneva).

"Front side OHMIC contact formation for SiC device" was invented by Simone Rascuna (Catania, Italy), Paolo Badala (Acireale, Italy), Gabriele Bellocchi (Catania, Italy), Valeria Puglisi (Catania, Italy) and Dario Tenaglia (Gravina di Catania, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure disclose improved silicon carbide (SiC) power devices and methods of fabrication of such devices. A SiC power device includes a semiconductor base material with a first side and a second side and a first metallic layer disposed o...