US Patent Issued to STMicroelectronics International on June 23 for "High-voltage bidirectional switch device with improved electrical characteristics" (Italian Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,587, issued on June 23, was assigned to STMicroelectronics International N.V. (Geneva).

"High-voltage bidirectional switch device with improved electrical characteristics" was invented by Marco Zamprogno (Cesano Maderno, Italy), Pasquale Flora (Varese, Italy) and Fabio Severini (Orzinuovi, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A switch device is described, formed by: a first switch MOS transistor, with its drain terminal connected to a first switch terminal, source terminal connected to an internal source node and gate terminal connected to an internal gate node; a second switch MOS transistor, with its drain terminal connected to a s...