US Patent Issued to STMICROELECTRONICS INTERNATIONAL on Aug. 4 for "Method for creating an ohmic contact on a high-power electrical diode" (Italian Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,764, issued on Aug. 4, was assigned to STMICROELECTRONICS INTERNATIONAL N.V. (Geneva).

"Method for creating an ohmic contact on a high-power electrical diode" was invented by Simone Rascuna' (Catania, Italy), Paolo Badala' (Acireale, Italy), Gabriele Bellocchi (Catania, Italy) and Valeria Puglisi (Catania, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming an ohmic contact on a semiconductor component, for example a high-power electrical diode, is provided. An example method includes depositing a first metal layer on a top surface of a semiconductor drift layer having an electrical contact point, the first metal layer highly re...