US Patent Issued to STMicroelectronics International on Aug. 25 for "Process for manufacturing localized ion implants in silicon-carbide power electronic devices" (Italian Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,069, issued on Aug. 25, was assigned to STMicroelectronics International N.V. (Geneva).

"Process for manufacturing localized ion implants in silicon-carbide power electronic devices" was invented by Cateno Marco Camalleri (Catania, Italy), Mario Giuseppe Saggio (Aci Bonaccorsi, Italy), Edoardo Zanetti (Valverde, Italy) and Gabriele Bellocchi (Catania, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing process provides for: forming a semiconductor body of silicon carbide, having a front surface; performing a localized ion implantation to form implanted regions in implant portions in the semiconductor body. The step of performing a l...