ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,461, issued on April 7, was assigned to STMicroelectronics International N.V. (Geneva).
"Memory device" was invented by Christophe Goncalves (Puyloubier, France), Marc Battista (Allauch, France) and Francois Tailliet (Fuveau, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a memory device including a sense amplifier, wherein the amplifier comprises a first inverter, wherein an input and an output of the inverter are coupled to a first transistor configured to be switched on during a step of pre-charging of a memory cell."
The patent was filed on Feb. 21, 2024, under Application No. 18/583,574.
*For further i...