US Patent Issued to STMicroelectronics International on April 14 for "Static random access memory supporting a dynamically variable duration self-time delay for a single clock cycle read-modify-write operation" (Indian Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,118, issued on April 14, was assigned to STMicroelectronics International N.V. (Geneva).

"Static random access memory supporting a dynamically variable duration self-time delay for a single clock cycle read-modify-write operation" was invented by Praveen Kumar Verma (Greater Noida, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory array includes memory cells forming a data word location accessed in response to a word line signal. A data sensing circuit configured to sense data on bit lines associated with the memory cells. The sensed data corresponds to a current data word stored at the data word location. A data latching circuit latche...