US Patent Issued to STMicroelectronics France on June 9 for "Protection against electrostatic discharges" (French Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,861, issued on June 9, was assigned to STMicroelectronics France (Montrouge, France).

"Protection against electrostatic discharges" was invented by Johan Bourgeat (Saint Pierre d'Allevard, France) and Yohann Solaro (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electronic device includes a doped semiconductor substrate of a first conductivity type. A first doped well of a second conductivity type opposite to the first conductivity type extends into the doped semiconductor substrate from a surface thereof. A second doped well of the first conductivity type is located in the first well. A third electrically-insulating well is locat...