US Patent Issued to STMICROELECTRONICS (TOURS) on Oct. 27 for "Method of fabricating a capacitor" (French Inventor)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,662, issued on Oct. 27, was assigned to STMICROELECTRONICS (TOURS) SAS (Tours, France).

"Method of fabricating a capacitor" was invented by Mohamed Boufnichel (Monnaie, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a capacitor including a first conductive layer over which is formed a stack, comprising from the upper face of the first layer, a first electrode, a first dielectric layer, a second electrode, and a second conductive layer, the stack comprising a stair step within the second conductive layer, the second electrode, and a part of the thickness of the first dielectric layer, the stair step being fill...