US Patent Issued to STMicroelectronics (Rousset) on Nov. 3 for "Method for manufacturing a Schottky diode and corresponding integrated circuit" (French Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,321, issued on Nov. 3, was assigned to STMicroelectronics (Rousset) SAS (Rousset, France).

"Method for manufacturing a Schottky diode and corresponding integrated circuit" was invented by Abderrezak Marzaki (Aix en Provence, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a Schottky diode on a substrate. The Schottky diode includes a layer of polysilicon disposed on a dielectric layer within the substrate that is configured to electrically insulate the layer of polysilicon from the substrate. The layer of polysilicon includes an N-type doped first cathode region adjacent to an undoped second anode region. A first...