US Patent Issued to STMicroelectronics (Rousset), STMicroelectronics (China) Investment on Sept. 22 for "Near-field communication device" (Chinese, French Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,743,688, issued on Sept. 22, was assigned to STMicroelectronics (Rousset) SAS (Rousset, France) and STMicroelectronics (China) Investment Co. Ltd. (Shanghai).

"Near-field communication device" was invented by Pierre Rizzo (Trets, France) and Laurent Tricheur (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A first near-field communication device detects the presence of a second near-field communication device located within range. In response to that detection, there is an initiation of a near-field communication between the first and second devices. In case of a failure of the initiation of the near-field communication, instead an initiation o...