ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,259, issued on March 24, was assigned to STMicroelectronics (Crolles 2) SAS (Crolles, France).
"Lateral bipolar transistor" was invented by Pascal Chevalier (Chapareillan, France), Sebastien Fregonese (Leognan, France) and Thomas Zimmer (Talence, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "A lateral bipolar transistor includes an emitter region doped with a first conductivity type, having a first width and a first average doping concentration; a collector region doped with the first conductivity type, having a second width greater than the first width of the emitter region and a second average doping concentration lower than the first ave...