ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,705, issued on Aug. 11, was assigned to STMicroelectronics (Crolles 2) SAS (Crolles, France).
"Siliciding method" was invented by Magali Gregoire (Crolles, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes first semiconductor regions each having a silicided portion with group-III, group-IV, and/or group-V atoms implanted therein. In each first semiconductor region, a concentration of the group-III, group-IV, and/or group-V atoms is maximum at an interface between the silicided portion and a non-silicided portion. Other semiconductor regions in the integrated circuit each include a silicided portion also having grou...