ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,482, issued on March 31, was assigned to STMICROELECTRONICS S.r.l. (Agrate Brianza, Italy) and STMICROELECTRONICS (ROUSSET) SAS (Rousset, France).

"Electronic device comprising transistors" was invented by Rosalia Germana-Carpineto (Antibes, France), Lia Masoero (Marseilles, France) and Luigi Innacolo (Catania, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to an electronic device comprising a semiconductor substrate and transistors having their gates contained in trenches extending in the semiconductor substrate, each transistor comprising a doped semiconductor well of a first conductivity type, the well being ...