ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,951, issued on Aug. 18, was assigned to STATS ChipPAC Pte. Ltd. (Singapore).

"Semiconductor device and method of making redistribution layers with intensive pulsed light irradiation" was invented by YongMoo Shin (Incheon, South Korea), HeeSoo Lee (Incheon, South Korea) and SuJeong Kwon (Incheon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device has a substrate. An electrical component is disposed over the substrate. An encapsulant is deposited over the electrical component. A conductive layer is formed over the substrate opposite the electrical component after depositing the encapsulant. The conductive layer is deposi...