US Patent Issued to SPTS Technologies on July 14 for "Method of plasma etching" (British Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,683,126, issued on July 14, was assigned to SPTS Technologies Ltd. (Newport, Great Britain).

"Method of plasma etching" was invented by Alex Huw Wood (Newport, Great Britain), Kevin Riddell (Newport, Great Britain), Huma Ashraf (Newport, Great Britain) and Janet Hopkins (Newport, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "An additive-containing aluminium nitride film is plasma etched. The additive-containing aluminium nitride film contains an additive element selected from scandium, yttrium or erbium. A workpiece is placed upon a platen within a plasma chamber. The workpiece includes a substrate having an additive-containing aluminium ...