US Patent Issued to SONY SEMICONDUCTOR SOLUTIONS on Oct. 27 for "Magnetoresistive effect memory" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,357, issued on Oct. 27, was assigned to SONY SEMICONDUCTOR SOLUTIONS Corp. (Tokyo).

"Magnetoresistive effect memory" was invented by Lui Sakai (Kanagawa, Japan), Yutaka Higo (Kanagawa, Japan), Keizo Hiraga (Kanagawa, Japan) and Masanori Hosomi (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistive effect memory including a magnetoresistive element and a write circuit is provided. The magnetoresistive element includes a fixed layer whose magnetization direction is fixed and a recording layer whose magnetization direction changes. The write circuit reverses magnetization of the recording layer so that a resistance value of ...