US Patent Issued to SONY SEMICONDUCTOR SOLUTIONS on Oct. 20 for "Magnetoresistive element and magnetic memory" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,744, issued on Oct. 20, was assigned to SONY SEMICONDUCTOR SOLUTIONS Corp. (Kanagawa, Japan).

"Magnetoresistive element and magnetic memory" was invented by Yutaka Higo (Kanagawa, Japan), Lui Sakai (Kanagawa, Japan), Masaki Endo (Kanagawa, Japan), Keizo Hiraga (Kanagawa, Japan) and Masanori Hosomi (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a magnetoresistive element with a second magnetic layer. The second magnetic layer is a perpendicular magnetization layer when no voltage is applied to the magnetoresistive element, changes from the perpendicular magnetization layer to an in-plane magnetization layer when a first v...