US Patent Issued to Sony Semiconductor Solutions on March 24 for "Nonvolatile memory element and method for manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,424, issued on March 24, was assigned to Sony Semiconductor Solutions Corp. (Kanagawa, Japan).

"Nonvolatile memory element and method for manufacturing the same" was invented by Hironobu Tanigawa (Kumamoto, Japan), Eiji Kariyada (Kumamoto, Japan) and Hiroki Tanabe (Kumamoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A variable-resistance nonvolatile memory element 11 of the present disclosure has a stack 30 including at least a magnetization fixed layer 31, an intermediate layer 32, and a storage layer 33, and a nonmagnetic material 36 is dispersed in at least one of the magnetization fixed layer 31 and the storage layer 33."

The patent...