ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,743, issued on June 23, was assigned to SONY SEMICONDUCTOR SOLUTIONS Corp. (Kanagawa, Japan).

"Semiconductor apparatus, imaging apparatus, and manufacturing method of semiconductor apparatus" was invented by Tetsuo Gocho (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Parasitic capacitance in a through-silicon via (TSV) is reduced. A semiconductor apparatus includes a given layer. A via vertically penetrates the given layer. A conductor is in contact with an upper surface side material and a lower surface side material of the vertically penetrated layer. The conductor forms, between the conductor and an inside of the via, a cavity po...