US Patent Issued to SONY SEMICONDUCTOR SOLUTIONS on Aug. 25 for "Semiconductor storage device and method of manufacturing semiconductor storage device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,761, issued on Aug. 25, was assigned to SONY SEMICONDUCTOR SOLUTIONS Corp. (Kanagawa, Japan).

"Semiconductor storage device and method of manufacturing semiconductor storage device" was invented by Masanori Tsukamoto (Kanagawa, Japan) and Jun Okuno (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a semiconductor storage device that is allowed to obtain a sufficient margin for operation. The semiconductor storage device includes: a field-effect transistor; an interlayer insulating film; a contact; a first wiring layer; a first insulating layer; an opening section; and a ferroelectric capacitor. The field-effect transi...