ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,048, issued on Aug. 25, was assigned to SONY SEMICONDUCTOR SOLUTIONS Corp. (Kanagawa, Japan).
"MRAM with annular shield winding" was invented by Kazuhiro Bessho (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A storage device according to an aspect of the present disclosure includes an MTJ element, which is an example of a storage element including a storage layer having a changeable magnetization direction and an annular short-circuit winding provided for the MTJ element and the annular short-circuit winding has conductivity. The annular short-circuit winding is near the storage element."
The patent was filed on Feb. 18, 2022, unde...