US Patent Issued to SONY SEMICONDUCTOR SOLUTIONS on Aug. 25 for "Magnetoresistive effect memory, memory array, and memory system" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,857, issued on Aug. 25, was assigned to SONY SEMICONDUCTOR SOLUTIONS Corp. (Kanagawa, Japan).

"Magnetoresistive effect memory, memory array, and memory system" was invented by Lui Sakai (Kanagawa, Japan), Masanori Hosomi (Kanagawa, Japan), Yutaka Higo (Kanagawa, Japan) and Keizo Hiraga (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a magnetoresistive effect memory that includes a magnetoresistive effect element. The magnetoresistive effect element provided in the magnetoresistive effect memory includes a voltage-controlled magnetic anisotropy effect layer (first magnetization free layer that is a magnetization free layer...