ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,254, issued on Sept. 8, was assigned to Sony Group Corp. (Tokyo).
"Complementary transistor and semiconductor device" was invented by Hidetoshi Oishi (Saga, Japan), Koichi Matsumoto (Kanagawa, Japan) and Kazuyuki Tomida (Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A complementary transistor is constituted of a first transistor TR1 and a second transistor TR2, active regions 32, 42 of the respective transistors are formed by layering first A layers 33, 43 and the first B layers 35, 45 respectively, surface regions 201, 202 provided in a base correspond to first A layers 33, 43 respectively, first B layers 35, 45 each have a conduct...