US Patent Issued to Sony Group on June 30 for "Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate process" (Japanese Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,319, issued on June 30, was assigned to Sony Group Corp. (Tokyo).

"Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate process" was invented by Yasushi Tateshita (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device in which sufficient stress can be applied to a channel region due to lattice constant differences."

The patent was filed on Dec. 12, 2023, under Application No. 18/536,880.

*For further information, including images, charts and tables, please visit: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2F...