US Patent Issued to Soitec on Sept. 1 for "Method for fabricating a polycrystalline silicon carbide carrier substrate" (French Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,401, issued on Sept. 1, was assigned to Soitec (Bernin, France).

"Method for fabricating a polycrystalline silicon carbide carrier substrate" was invented by Hugo Biard (Bernin, France) and Melanie Lagrange (Bernin, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a polycrystalline silicon carbide carrier substrate involves growing an initial polycrystalline silicon carbide substrate on a seed of graphite or of silicon-carbide. A stiffening carbon film is then formed on a front face of the initial substrate. The initial substrate has, in the plane of its front face, a first average silicon carbide grain size. The seed is...