US Patent Issued to Soitec on Nov. 3 for "Method for manufacturing a composite structure comprising a thin film of monocrystalline sic on a carrier substrate of polycrystalline sic" (French Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,663, issued on Nov. 3, was assigned to Soitec (Bernin, France).

"Method for manufacturing a composite structure comprising a thin film of monocrystalline sic on a carrier substrate of polycrystalline sic" was invented by Hugo Biard (Bernin, France), Ionut Radu (Bernin, France) and Frederic Allibert (Bernin, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a composite structure including a thin layer of single-crystal silicon carbide on a polycrystalline silicon carbide carrier substrate includes providing an initial substrate of single-crystal silicon carbide and a carrier substrate of polycrystalline silicon carbide. A p...