US Patent Issued to Soitec on March 24 for "NCFET transistor comprising a semiconductor-on-insulator substrate" (French Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,250, issued on March 24, was assigned to Soitec (Bernin, France).

"NCFET transistor comprising a semiconductor-on-insulator substrate" was invented by Ionut Radu (Bernin, France), Guillaume Besnard (Bernin, France) and Sorin Cristoloveanu (Bernin, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "An NCFET transistor comprises a semiconductor-on-insulator substrate for a field-effect transistor, and the NCFET transistor successively comprises, from its base to its surface: a semiconductor carrier substrate; a single ferroelectric layer, arranged in direct contact with the carrier substrate, which layer is designed to be biased so as to form a ne...