ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,836, issued on July 14, was assigned to Socionext Inc. (Kanagawa, Japan).
"Semiconductor integrated circuit device" was invented by Junji Iwahori (Yokohama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A layout structure of a capacitive cell using forksheet FETs is provided. In transistors P3 and N3, VDD is supplied to a pair of pads 22c, 22d and a gate interconnect 36c, and VSS is supplied to a pair of pads 27c, 27d and a gate interconnect 31c. Capacitances are produced between nanosheets 21c and the gate interconnect 31c and between nanosheets 26c and the gate interconnect 36c. The faces of the nanosheets 21c closer to the nanosheets 26c a...