US Patent Issued to Smarter Silicon (Shanghai) Technologies on March 31 for "Method and device and storage medium for controlling read/write strategy based on fullness difference between read and write queues" (Chinese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,591,395, issued on March 31, was assigned to Smarter Silicon (Shanghai) Technologies Co. Ltd. (Shanghai).

"Method and device and storage medium for controlling read/write strategy based on fullness difference between read and write queues" was invented by Zexi Ma (Shanghai) and Feng Li (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory control method includes obtaining data parameters in a read queue and a write queue, updating a read/write control strategy according to the first detection result and the second detection result to obtain an updated read/write control strategy, and controlling subsequent read/write operations of a memory ...