ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,639, issued on Oct. 27, was assigned to SK keyfoundry Inc. (Cheongju-si, South Korea).

"Single poly non-volatile memory device and manufacturing method thereof" was invented by Su Jin Kim (Cheongju-si, South Korea), Min Kuck Cho (Cheongju-si, South Korea), Jung Hwan Lee (Cheongju-si, South Korea) and In Chul Jung (Cheongju-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A single poly non-volatile memory device is provided. The single poly non-volatile memory device is formed in a semiconductor substrate, and includes a sensing transistor, a selection transistor, and a capacitor, wherein a thickness of a selection gate insulating film ...