ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,366, issued on Nov. 3, was assigned to SK keyfoundry Inc. (Cheongju-si, South Korea).
"Non-volatile semiconductor memory device and manufacturing method thereof" was invented by Yangbeom Kang (Cheongju-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a source region and a drain region disposed in a substrate, a gate stack including a floating gate and a control gate disposed between the source region and the drain region, a select gate insulating layer disposed on a sidewall of the gate stack, and a select gate disposed on the select gate insulating layer, the select gate having a height higher than a hei...