ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,230, issued on Sept. 8, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).
"Method for fabricating semiconductor device" was invented by Young Gwang Yoon (Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to the embodiment of the present invention, it is possible to minimize the loss of the substrate that may be caused by the difference in etching height by taking advantage of the difference in the etch selectivity between a nitride material, an oxide material, and a conductive material, and minimizing the exposure of the substrate while each contact hole is formed. According to the embodiment of the present in...