US Patent Issued to SK hynix on Sept. 29 for "Memory device and method of operating the memory device" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,749,539, issued on Sept. 29, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and method of operating the memory device" was invented by Jong Woo Kim (Icheon-si, South Korea) and Young Cheol Shin (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided herein is a memory device related to precharging a bit line and a method of operating the memory device. The memory device including a plurality of memory cells each connected to any one of a plurality of word lines, the any one of the plurality of word lines being a selected word line, and programmed to any one of a plurality of program states, a row decoder ...