ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,744,091, issued on Sept. 22, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Non-volatile read refresh operation comprising discharging a plurality of word lines" was invented by Sung Hyun Hwang (Gyeonggi-do, South Korea) and Jae Hyeon Shin (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory system includes: a nonvolatile memory device including a plurality of memory blocks each including a plurality of memory cells coupled to a plurality of word lines; and a controller configured to control the nonvolatile memory device to perform a read operation on the plurality of memory blocks, wherein the read operation in...