US Patent Issued to SK hynix on Sept. 15 for "Memory device and method of performing a verify operation of the memory device" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,335, issued on Sept. 15, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and method of performing a verify operation of the memory device" was invented by Chang Hyun Han (Icheon-si, South Korea) and Moon Soo Sung (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided herein is a memory device and a method of performing a verify operation of the memory device. The memory device includes a memory cell array including memory cells, a source line discharge transistor configured to couple a source line of the memory cell array to a ground, a voltage generator configured to generate a gate voltage that is a...