US Patent Issued to SK hynix on Sept. 1 for "Semiconductor memory device performing program operation" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,663, issued on Sept. 1, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor memory device performing program operation" was invented by In Gon Yang (Icheon-si, South Korea) and Jae Hyeon Shin (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A page buffer of a semiconductor memory device includes a bit line connection transistor, an internal operation circuit, and a plurality of latch circuits. During a program operation of selected memory cells, a power voltage is applied to the bit line connection transistor to set a voltage of a bit line connected to memory cells having a threshold voltage greater than a ma...