US Patent Issued to SK hynix on Sept. 1 for "Semiconductor device and methods of manufacturing the semiconductor device" (South Korean Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,231, issued on Sept. 1, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device and methods of manufacturing the semiconductor device" was invented by Young Gwang Yoon (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a buried gate structure including: a gate trench formed in a substrate; a gate insulating layer conformally formed over a bottom surface and an inner wall of the gate trench; a dipole inducing layer conformally formed over a bottom surface and an inner wall of the gate insulating layer; a dipole diffusion barrier layer conformally formed over a bottom surfac...