ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,658, issued on Sept. 1, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Memory device and method of performing program operation" was invented by Hyun Seob Shin (Icheon-si, South Korea), Yeong Jo Mun (Icheon-si, South Korea) and Sung Hyun Hwang (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present technology relates to a memory system. A memory device according to the present technology may include a memory cell array including memory cells connected to a plurality of word lines, a peripheral circuit configured to apply operation voltages to the plurality of word lines during a voltage increase period in which a...