US Patent Issued to SK hynix on Oct. 27 for "Semiconductor memory device with improved word line failure" (South Korean Inventor)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,642, issued on Oct. 27, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor memory device with improved word line failure" was invented by Hyun Sub Kim (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided herein is a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a first dummy stacked body and a second dummy stacked body formed in a connection area of a substrate including a cell array area and the connection area, a cell stacked body disposed in the cell array area and the connection area and configured to enclose the first dummy stacked body...