US Patent Issued to SK hynix on Oct. 27 for "Semiconductor device having discharge contact structure and method of manufacturing the same" (South Korean Inventor)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,641, issued on Oct. 27, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor device having discharge contact structure and method of manufacturing the same" was invented by Jae Ho Kim (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device, and a method for manufacturing the semiconductor device, includes a discharge interconnection structure and a source structure on the discharge interconnection structure. The semiconductor device also includes a first discharge contact structure extending through the source structure to be electrically connected to the discharge interconnection structure, th...